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2014 | 125 | 6 | 1303-1306
Article title

Nanostructure Formation during Amorphous Carbon Films Deposition

Content
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EN
Abstracts
EN
Influence of Cu particles for the carbon nanostructures formation during a-C:H films deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by Ar^{+} ions for the Cu particles deposition on the silicon before a-C:H films formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the first stage of carbon film deposition. Structure of a:C-H films and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the film, then deposition time was 300 s.
Keywords
Year
Volume
125
Issue
6
Pages
1303-1306
Physical description
Dates
published
2014-06
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n613kz
Identifiers
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