Nanostructure Formation during Amorphous Carbon Films Deposition

• Authors: Z. Rutkuniene , L. Vigricaite , A. Grigonis
• Languages of publication: EN

Abstracts

EN

Influence of Cu particles for the carbon nanostructures formation during a-C:H films deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by Ar^{+} ions for the Cu particles deposition on the silicon before a-C:H films formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the first stage of carbon film deposition. Structure of a:C-H films and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the film, then deposition time was 300 s.

Keywords

EN

81.05.uj; 81.15.-z; 78.20.-e; 82.80.Gk

Discipline

• 81.05.uj: Diamond/nanocarbon composites
• 82.80.Gk: Analytical methods involving vibrational spectroscopy
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 6
• Pages: 1303-1306

Dates

published

2014-06

Contributors

author

Z. Rutkuniene

• Kaunas University of Technology, Physics Department, Studentu 50, LT 51368, Kaunas, Lithuania

author

L. Vigricaite

• Kaunas University of Technology, Physics Department, Studentu 50, LT 51368, Kaunas, Lithuania

author

A. Grigonis

• Kaunas University of Technology, Physics Department, Studentu 50, LT 51368, Kaunas, Lithuania

References

• [1] M. Meyyappan, L. Delzeit, A. Cassell, D. Hash, Plasma Sourc. Sci. Technol. 12, 205 (2003), doi: 10.1088/0963-0252/12/2/312
• [2] S.H. Lim, Z. Luo, Z. Shen, J. Lin, Nanoscale Res. Lett. 5, 1377 (2010), doi: 10.1007/s11671-010-9710-2
• [3] G. Hong, Y. Chen, P. Li, J. Zhang, Carbon 50, 2067 (2012), doi: 10.1016/j.carbon.2012.01.035
• [4] Z.H. Gan, G.Q. Yu, B.K. Tay, C.M. Tan, Z.W. Zhao, Y.Q. Fu, J. Phys. D, Appl. Phys. 37, 81 (2004), doi: 10.1088/0022-3727/37/1/013
• [5] W.R. Gilkes, S. Prawer, K.W. Nugent, J. Robertson, H.S. Sands, Y. Lifshitz, X. Shi, J. Appl. Phys. 87, 7283 (2000), doi: 10.1063/1.372981
• [6] C. Cong, T. Yu, K. Sato, J.Z. Shang, R. Saito, ACS Nano 5, 8760 (2011), doi: 10.1021/nn203472f
• [7] A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, A.K. Geim, Phys. Rev. Lett. 97, 187401 (2006), doi: 10.1103/PhysRevLett.97.187401
• [8] Md. Shajahan, Young Hwan Mo, Kee Suk Nahm, Korean J. Chem. Eng. 20, 566 (2003), doi: 10.1007/BF02705567
• [9] Gore, Anup Sane, in: Flame Synthesis of Carbon Nanotubes, Carbon Nanotubes - Synthesis, Characterization, Applications, Ed. Siva Yellampalli, InTech, 2011, doi: 10.5772/21012

Identifiers

DOI

10.12693/APhysPolA.125.1303