PL EN


Preferences help
enabled [disable] Abstract
Number of results
2014 | 125 | 6 | 1267-1271
Article title

Admittance and Permittivity in Doped Layered TlGaSe_2 Single Crystals

Content
Title variants
Languages of publication
EN
Abstracts
EN
In doped TlGaSe_2 crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations N_{imp} < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with N_{imp} > 0.5 at.% resulted in full suppression of this phase transition presence.
Keywords
EN
Contributors
author
  • Belarusian State University, Independence av. 4, 220030 Minsk, Belarus
author
  • Belarusian State University, Independence av. 4, 220030 Minsk, Belarus
author
  • Institute of Physics of Azerbaijan National Academy of Science, Baku, Azerbaijan
author
  • Department of Electrical Devices and High Voltages Technologies, Lublin University of Technology Nadbystrzycka 38a, 20-618 Lublin, Poland
  • Department of Electrical Devices and High Voltages Technologies, Lublin University of Technology Nadbystrzycka 38a, 20-618 Lublin, Poland
author
  • Al-Balqa Applied University, P.O. Box 4545, Amman 11953, Jordan
author
  • Belarusian State University, Independence av. 4, 220030 Minsk, Belarus
References
  • [1] A.M. Panich, J. Phys. Condens. Matter 20, 293202 (2008), doi: 10.1088/0953-8984/20/29/293202
  • [2] E. ┼×enturk, L. Tumbek, F. Salehli, F.A. Mikailov, Cryst. Res. Technol. 40, 248 (2005), doi: 10.1002/crat.200410333
  • [3] F.A. Mikailov, E. Basaran, T.G. Mammadov, M.Yu. Seyidov, E. Senturk, Physica B 334, 13 (2003), doi: 10.1016/S0921-4526(02)02682-0
  • [4] F.A. Mikailov, E. Basaran, E.S. Entu, L. Tu. Mbek, T.G. Mammadov, V.P. Aliev, Phase Transit. 76, 1057 (2003), doi: 10.1080/0141159031000160369
  • [5] N.A. Abdullayev, T.G. Mammadov, R.A. Suleymanov, Phys. Status Solidi B 242, 983 (2005), doi: 10.1002/pssb.200402126
  • [6] M.Yu. Seyidov, R.A. Suleymanov, Phys. Solid State 50, 1219 (2008), doi: 10.1134/S1063783408070056
  • [7] M.Yu. Seyidov, R.A. Suleymanov, T.G. Mammadov, A.K. Fedotov, S.S. Babayev, G.M. Sharifov, Jpn. J. Appl. Phys. 50, 05FD07-2 (2011), doi: 10.1143/JJAP.50.05FD07
  • [8] A.K. Fedotov, M.I. Tarasik, T.G. Mammadov, I.A. Svito, P. Zhukowski, T.N. Koltunowicz, M.Yu. Seyidov, R.A. Suleymanov, V. Grivickas, V. Bicbaevas, Electrical Review 88, 301 (2012), (in Polish) http://pe.org.pl/abstract_pl.php?nid=6168
  • [9] K. Allakhverdiev, R. Sardarly, F. Wondre, J.F. Ryan, Phys. Status Solidi B 88, K5 (1978), doi: 10.1002/pssb.2220880145
  • [10] S.N. Mustafayev, V.A. Aliev, M.M. Asadov, Sov. Solid State Phys. 40, 561 (1998), doi: 10.1134/1.1130352
  • [11] M.Yu. Seyidov, R.A. Suleymanov, Y. Bakis, F. Salehly, J. Appl. Phys. 108, 074114 (2010), doi: 10.1063/1.3486219
  • [12] F. Salehli, Y. Bakis, M.Yu. Seyidov, R.A. Suleymanov, Semiconductor Sci. Technol. 22, 843 (2007), doi: 10.1088/0268-1242/22/8/002
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n604kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.