Admittance and Permittivity in Doped Layered TlGaSe_2 Single Crystals

• Authors: S. Dawood , A. Fedotov , T. Mammadov , P. Zukowski , T. Koltunowicz , A. Saad , N. Drozdov
• Languages of publication: EN

Abstracts

EN

In doped TlGaSe_2 crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations N_{imp} < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with N_{imp} > 0.5 at.% resulted in full suppression of this phase transition presence.

Keywords

EN

73.61.Ey; 84.37.+q; 64.70.Nd

Discipline

• 64.70.Nd: Structural transitions in nanoscale materials
• 84.37.+q: Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
• 73.61.Ey: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 6
• Pages: 1267-1271

Dates

published

2014-06

Contributors

author

S. Dawood

• Belarusian State University, Independence av. 4, 220030 Minsk, Belarus

author

A. Fedotov

• Belarusian State University, Independence av. 4, 220030 Minsk, Belarus

author

T. Mammadov

• Institute of Physics of Azerbaijan National Academy of Science, Baku, Azerbaijan

author

P. Zukowski

• Department of Electrical Devices and High Voltages Technologies, Lublin University of Technology Nadbystrzycka 38a, 20-618 Lublin, Poland

author

T. Koltunowicz

• Department of Electrical Devices and High Voltages Technologies, Lublin University of Technology Nadbystrzycka 38a, 20-618 Lublin, Poland

author

A. Saad

• Al-Balqa Applied University, P.O. Box 4545, Amman 11953, Jordan

author

N. Drozdov

• Belarusian State University, Independence av. 4, 220030 Minsk, Belarus

References

• [1] A.M. Panich, J. Phys. Condens. Matter 20, 293202 (2008), doi: 10.1088/0953-8984/20/29/293202
• [2] E. Şenturk, L. Tumbek, F. Salehli, F.A. Mikailov, Cryst. Res. Technol. 40, 248 (2005), doi: 10.1002/crat.200410333
• [3] F.A. Mikailov, E. Basaran, T.G. Mammadov, M.Yu. Seyidov, E. Senturk, Physica B 334, 13 (2003), doi: 10.1016/S0921-4526(02)02682-0
• [4] F.A. Mikailov, E. Basaran, E.S. Entu, L. Tu. Mbek, T.G. Mammadov, V.P. Aliev, Phase Transit. 76, 1057 (2003), doi: 10.1080/0141159031000160369
• [5] N.A. Abdullayev, T.G. Mammadov, R.A. Suleymanov, Phys. Status Solidi B 242, 983 (2005), doi: 10.1002/pssb.200402126
• [6] M.Yu. Seyidov, R.A. Suleymanov, Phys. Solid State 50, 1219 (2008), doi: 10.1134/S1063783408070056
• [7] M.Yu. Seyidov, R.A. Suleymanov, T.G. Mammadov, A.K. Fedotov, S.S. Babayev, G.M. Sharifov, Jpn. J. Appl. Phys. 50, 05FD07-2 (2011), doi: 10.1143/JJAP.50.05FD07
• [8] A.K. Fedotov, M.I. Tarasik, T.G. Mammadov, I.A. Svito, P. Zhukowski, T.N. Koltunowicz, M.Yu. Seyidov, R.A. Suleymanov, V. Grivickas, V. Bicbaevas, Electrical Review 88, 301 (2012), (in Polish) http://pe.org.pl/abstract_pl.php?nid=6168
• [9] K. Allakhverdiev, R. Sardarly, F. Wondre, J.F. Ryan, Phys. Status Solidi B 88, K5 (1978), doi: 10.1002/pssb.2220880145
• [10] S.N. Mustafayev, V.A. Aliev, M.M. Asadov, Sov. Solid State Phys. 40, 561 (1998), doi: 10.1134/1.1130352
• [11] M.Yu. Seyidov, R.A. Suleymanov, Y. Bakis, F. Salehly, J. Appl. Phys. 108, 074114 (2010), doi: 10.1063/1.3486219
• [12] F. Salehli, Y. Bakis, M.Yu. Seyidov, R.A. Suleymanov, Semiconductor Sci. Technol. 22, 843 (2007), doi: 10.1088/0268-1242/22/8/002

Identifiers

DOI

10.12693/APhysPolA.125.1267