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Number of results
2014 | 125 | 4 | 1006-1009
Article title

Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process

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EN
Abstracts
EN
In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
Keywords
EN
Contributors
author
  • GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain
author
  • Solarforce, 1 rue du Dauphin, 38300 Bourgoin-Jallieu, France
author
  • GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain
author
  • GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain
author
  • GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain
author
  • Solarforce, 1 rue du Dauphin, 38300 Bourgoin-Jallieu, France
author
  • EC2-Modélisation, 66 bd Niels Bohr CS 52132, 69603 Villeurbanne, France
References
  • [1] C. Belouet, J. Cryst. Growth 82, 110 (1987), doi: 10.1016/0022-0248(87)90173-4
  • [2] G. Sarau, S. Christiansen, M. Holla, W. Seifert, Solar Energy Mater. Solar Cells 95, 2264 (2011), doi: 10.1016/j.solmat.2011.03.039
  • [3] P. Keller, F. De Moro, S. Seren, G. Hahn, Energy Procedia 38, 576 (2013), doi: 10.1016/j.egypro.2013.07.31
  • [4] F. De Moro, A. Focsa, K. Derbouz, A. Slaoui, N. Auriac, H. Lignier, P. Keller, Phys. Status Solidi C 9, 2092 (2012), doi: 10.1002/pssc.201200087
  • [5] A. Gervais, R. Sharko, T. Moudda-Azzem, C. Belouet, J. Cryst. Growth 82, 209 (1987), doi: 10.1016/0022-0248(87)90188-6
  • [6] C. Bigot, C. Baillis, E. Jolivet, M. Coret, R. Varrot, C. Belouet in: Proc. 6th Int. Workshop on Crystalline Silicon Solar Cells, Aix-les-Bains (France), 2012
  • [7] C.D. Graham, D.P. Pope, S. Kulkarni, Wolf, NASA report: Hot forming of silicon sheet, silicon sheet growth development for large area silicon sheet task of the low cost silicon solar array project, ERDA/JPL-954506-78/1 DC UC-6
  • [8] M. Becker, H. Scheel, S. Christiansen, H.P. Strunk, J. Appl. Phys. 101, 063531 (2007), doi: 10.1063/1.2434961
  • [9] I. DeWolf, Semicond. Sci. Technol. 11, 139 (1996), doi: 10.1088/0268-1242/11/2/001
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n463kz
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