Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process

• Authors: A. Tejero , E. Tupin , M. González , O. Martínez , J. Jiménez , C. Belouet , C. Baillis
• Languages of publication: EN

Abstracts

EN

In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.

Keywords

EN

78.30.Am; 61.72.Ff; 88.40.jj

Discipline

• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 78.30.Am: Elemental semiconductors and insulators
• 88.40.jj: Silicon solar cells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1006-1009

Dates

published

2014-04

Contributors

author

A. Tejero

• GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain

author

E. Tupin

• Solarforce, 1 rue du Dauphin, 38300 Bourgoin-Jallieu, France

author

M. González

• GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain

author

O. Martínez

• GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain

author

J. Jiménez

• GdS-Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. de Valladolid, 47011 Valladolid, Spain

author

C. Belouet

• Solarforce, 1 rue du Dauphin, 38300 Bourgoin-Jallieu, France

author

C. Baillis

• EC2-Modélisation, 66 bd Niels Bohr CS 52132, 69603 Villeurbanne, France

References

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Identifiers

DOI

10.12693/APhysPolA.125.1006