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Abstracts
In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se_2 layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se_2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se_2 and n-type ZnO layers.
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Pages
846-848
Physical description
Dates
published
2013-11
Contributors
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
- Faculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
- Faculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
- Faculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania
References
- [1] P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, M. Powalla, Prog. Photovolt. Res. Appl. 19, 894 (2011)
- [2] R. Adomavičius, A. Krotkus, R. Šustavičiutė, G. Molis, J. Kois, S. Bereznev, E. Mellikov, P. Gashin, Electron. Lett. 43, 1458 (2007)
- [3] A. Arlauskas, A. Krotkus, Semicond. Sci. Technol. 27, 115015 (2012)
- [4] G.H. Ma, D. Li, H. Ma, J. Shen, C.G Wu, J. Ge, S.H. Hu, N. Dai, Appl. Phys. Lett. 93, 211101 (2008)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv124n527kz