Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

• Authors: A. Koroliov , A. Arlauskas , S. Balakauskas , M. Šoliūnas , A. Maneikis , A. Krotkus , A. Šetkus , V. Tamošiūnas
• Languages of publication: EN

Abstracts

EN

In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se_2 layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se_2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se_2 and n-type ZnO layers.

Keywords

EN

78.66.Li; 88.40.jn; 77.55.hf

Discipline

• 88.40.jn: Thin film Cu-based I-III-VI2 solar cells
• 78.66.Li: Other semiconductors
• 77.55.hf: ZnO

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 846-848

Dates

published

2013-11

Contributors

author

A. Koroliov

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Arlauskas

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Faculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania

author

S. Balakauskas

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

M. Šoliūnas

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Maneikis

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Krotkus

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Faculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania

author

A. Šetkus

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

V. Tamošiūnas

• Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Faculty of Physics, Vilnius University, Saulėtekio Ave. 9, bldg. III, LT-10222 Vilnius, Lithuania

References

• [1] P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, M. Powalla, Prog. Photovolt. Res. Appl. 19, 894 (2011)
• [2] R. Adomavičius, A. Krotkus, R. Šustavičiutė, G. Molis, J. Kois, S. Bereznev, E. Mellikov, P. Gashin, Electron. Lett. 43, 1458 (2007)
• [3] A. Arlauskas, A. Krotkus, Semicond. Sci. Technol. 27, 115015 (2012)
• [4] G.H. Ma, D. Li, H. Ma, J. Shen, C.G Wu, J. Ge, S.H. Hu, N. Dai, Appl. Phys. Lett. 93, 211101 (2008)

Identifiers

DOI

10.12693/APhysPolA.124.846