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2011 | 119 | 5 | 657-659
Article title

Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells

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EN
Abstracts
EN
We report studies on electric field built in GaN/Al_{0.09}Ga_{0.91}N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible and mid infra-red interference pattern along the sample, the layer thickness and consequently the quantum well width was determined to vary linearly with the position. Secondly, photoluminescence spectra was taken at different positions. Correlation of those two measurements allows us to determine the built-in electric field to be 0.66 MV/cm, which is considerably larger than previously reported for similar structures.
Keywords
Year
Volume
119
Issue
5
Pages
657-659
Physical description
Dates
published
2011-05
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n525kz
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