Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells

• Authors: K. Zieleniewski , K. Pakuła , R. Bożek , K. Masztalerz , A. Wysmołek , R. Stępniewski
• Languages of publication: EN

Abstracts

EN

We report studies on electric field built in GaN/Al_{0.09}Ga_{0.91}N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible and mid infra-red interference pattern along the sample, the layer thickness and consequently the quantum well width was determined to vary linearly with the position. Secondly, photoluminescence spectra was taken at different positions. Correlation of those two measurements allows us to determine the built-in electric field to be 0.66 MV/cm, which is considerably larger than previously reported for similar structures.

Keywords

EN

78.55.Cr; 78.67.De; 77.55.hn; 81.15.Gh

Discipline

• 78.55.Cr: III-V semiconductors
• 78.67.De: Quantum wells
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 77.55.hn: Other piezoelectric or electrostrictive films

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 657-659

Dates

published

2011-05

Contributors

author

K. Zieleniewski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Pakuła

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Masztalerz

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

R. Stępniewski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.119.657