EN
Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained Al_{0.8}In_{0.2}N/AlN/GaN and nearly lattice matched Al_{0.84}In_{0.16}N/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × 10^7 cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.