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Number of results
2011 | 119 | 2 | 231-233

Article title

Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels

Content

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Languages of publication

EN

Abstracts

EN
Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained Al_{0.8}In_{0.2}N/AlN/GaN and nearly lattice matched Al_{0.84}In_{0.16}N/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × 10^7 cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.

Keywords

EN

Contributors

  • Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
  • Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania
author
  • Fluctuation Research Laboratory, Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, Vilnius 01108, Lithuania

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv119n243kz
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