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2011 | 119 | 2 | 199-202
Article title

THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

Content
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Languages of publication
EN
Abstracts
EN
Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of f_0 ± 10 GHz (with f_0 from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.
Keywords
EN
Year
Volume
119
Issue
2
Pages
199-202
Physical description
Dates
published
2011-02
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n233kz
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