THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors

• Authors: P. Nouvel , J. Torres , H. Marinchio , T. Laurent , C. Palermo , L. Varani , F. Teppe , P. Shiktorov , E. Starikov , V. Gruzinskis
• Languages of publication: EN

Abstracts

EN

Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of f_0 ± 10 GHz (with f_0 from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.

Keywords

EN

72.15.Nj; 72.20.Ht; 72.30.+q

Discipline

• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects
• 72.15.Nj: Collective modes (e.g., in one-dimensional conductors)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 199-202

Dates

published

2011-02

Contributors

author

P. Nouvel

• Institut d'Electronique du Sud-UMR, 5214, Montpellier, France

author

J. Torres

• Institut d'Electronique du Sud-UMR, 5214, Montpellier, France

author

H. Marinchio

• Institut d'Electronique du Sud-UMR, 5214, Montpellier, France

author

T. Laurent

• Institut d'Electronique du Sud-UMR, 5214, Montpellier, France

author

C. Palermo

• Institut d'Electronique du Sud-UMR, 5214, Montpellier, France

author

L. Varani

• Institut d'Electronique du Sud-UMR, 5214, Montpellier, France

author

F. Teppe

• Groupe d'Etude des Semiconducteurs-UMR, 5650, Montpellier, France

author

P. Shiktorov

• Semiconductor Physics Institute, A. Gostauto 11, Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, A. Gostauto 11, Vilnius, Lithuania

author

V. Gruzinskis

• Semiconductor Physics Institute, A. Gostauto 11, Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.199