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2011 | 119 | 2 | 167-169
Article title

Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

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EN
Abstracts
EN
Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_{0.3}Ga_{0.7}As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
Keywords
EN
Contributors
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania
author
  • Physikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany
author
  • Physikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany
author
  • Physikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany
author
  • Department of Physics, Lougborough University, Lougborough, LE113TU, United Kingdom
author
  • Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, D-79108 Freiburg, Germany
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n223kz
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