Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

• Authors: L. Subačius , R. Venckevičius , I. Kašalynas , D. Seliuta , G. Valušis , J. Schmidt , A. Lisauskas , H. Roskos , K. Alekseev , K. Köhler
• Languages of publication: EN

Abstracts

EN

Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_{0.3}Ga_{0.7}As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.

Keywords

EN

68.65.Cd; 06.60.Jn; 73.90.+f

Discipline

• 06.60.Jn: High-speed techniques (microsecond to femtosecond)
• 73.90.+f: Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
• 68.65.Cd: Superlattices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 167-169

Dates

published

2011-02

Contributors

author

L. Subačius

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

R. Venckevičius

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

I. Kašalynas

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

D. Seliuta

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

G. Valušis

• Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

J. Schmidt

• Physikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany

author

A. Lisauskas

• Physikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany

author

H. Roskos

• Physikalisches Institut, Johann Wolfgang Goethe Universität, Max-von-Laue-Str. 1, Frankfurt am Main, Germany

author

K. Alekseev

• Department of Physics, Lougborough University, Lougborough, LE113TU, United Kingdom

author

K. Köhler

• Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, D-79108 Freiburg, Germany

References

• 1. R. Köhler, A. Tredicucci, F. Beltram, H.E. Beere, E.H. Linfield, A.G. Davies, D.A. Ritchie, R.C. Iotti, F. Rossi, Nature 417, 156 (2002)
• 2. C. Waschke, H.G. Roskos, R. Schwedler, K. Leo, H. Kurz, K. Köhler, Phys. Rev. Lett. 70, 3319 (1993)
• 3. V.G. Lyssenko, G. Valušis, F. Löser, T. Hasche, K. Leo, M.M. Dignam, K. Köhler, Phys. Rev. Lett. 79, 301 (1997)
• 4. T. Hyart, N.V. Alexeeva, J. Mattas, K.N. Alekseev, Phys. Rev. Lett. 102, 140405 (2009)
• 5. T. Hyart, A.V. Shorokhov, K.N. Alekseev, Phys. Rev. Lett. 98, 220404 (2007)
• 6. A. Lisauskas, C. Blöser, R. Sachs, H.G. Roskos, A. Juozapavičius, G. Valušis, K. Köhler, Appl. Phys. Lett. 86, 102103 (2005)
• 7. A. Sibille, J.F. Palmier, F. Mollot, H. Wang, J.C. Esnault, Phys. Rev. B 39, 6272 (1989)
• 8. A. Sibille, J.F. Palmier, H. Wang, F. Mollot, Phys. Rev. Lett. 64, 52 (1990)
• 9. F. Capasso, K. Mohammed, A.Y. Cho, Appl. Phys. Lett. 48, 478 (1986)
• 10. L. Subačius, R. Venckevičius, I. Kašalynas, D. Seliuta, G. Valušis, A. Lisauskas, H.G. Roskos, K.N. Alekseev, K. Köhler, unpublished results

Identifiers

DOI

10.12693/APhysPolA.119.167