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2011 | 119 | 2 | 137-139
Article title

Photoresponse of Porous Silicon Structures to Infrared Radiation

Content
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EN
Abstracts
EN
Photoresponse of silicon samples containing porous structures have been studied under the action of CO_2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.
Keywords
EN
Contributors
  • Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania
author
  • Centre for Physical Science and Technology, Semiconductor Physics Institute, A. Goštauto 11, Vilnius LT-01108, Lithuania
author
  • Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania
author
  • Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania
author
  • Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania
  • Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n213kz
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