Photoresponse of Porous Silicon Structures to Infrared Radiation

• Authors: N. Samuolienė , E. Širmulis , J. Stupakova , J. Gradauskas , V. Zagadskij , E. Šatkovskis
• Languages of publication: EN

Abstracts

EN

Photoresponse of silicon samples containing porous structures have been studied under the action of CO_2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.

Keywords

EN

78.67.Rb; 78.56.-a; 73.40.Lq

Discipline

• 78.56.-a: Photoconduction and photovoltaic effects(for photoconduction and photovoltaic effects in bulk matter and thin films, see 72.40.+w and 73.50.Pz, respectively; see also 84.60.Jt Photoelectric conversion; for solar cells, see 88.40.H- and 88.40.J- in Solar energy)
• 78.67.Rb: Nanoporous materials
• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 2
• Pages: 137-139

Dates

published

2011-02

Contributors

author

N. Samuolienė

• Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania

author

E. Širmulis

• Centre for Physical Science and Technology, Semiconductor Physics Institute, A. Goštauto 11, Vilnius LT-01108, Lithuania

author

J. Stupakova

• Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania

author

J. Gradauskas

• Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania

author

V. Zagadskij

• Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania

author

E. Šatkovskis

• Vilnius Gediminas Technical University, Sauletekio ave. 11, Vilnius LT-10223, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.119.137