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2010 | 118 | 5 | 859-860
Article title

Model of Anisotropic Electrical Resistivity in Rough Thin Films

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EN
Abstracts
EN
In this work a new model of electrical resistivity is proposed in order to study the relationship between surface roughness geometry and thin films resistivity. The model is based on the numerical dynamic averaging of electron mean free path over whole simulated structure of rough film. For current-in-plane configuration the resistivity increases with decreasing film thickness faster than for current-perpendicular-to-plane one. Our simulations showed that big roughness depth and fine in-plane spatial period of roughness are crucial factors increasing the resistivity of ultrathin metallic layers.
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Contributors
author
  • Department of Physics, Technical University of Radom, I. Krasickiego 54, 26-600 Radom, Poland
  • Department of Physics, Technical University of Radom, I. Krasickiego 54, 26-600 Radom, Poland
References
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  • 2. E.H. Sondheimer, Adv. Phys. 1, 1 (1952)
  • 3. T. Szumiata, M. Gzik-Szumiata, K. Brzózka, Mater. Sci. Poland 26, 1039 (2008)
  • 4. T. Szumiata, M. Gzik-Szumiata, K. Brzózka, Acta Phys. Superfic. 11, 126 (2009)
  • 5. J.S. Jin, J.S. Lee, O. Kwon, Appl. Phys. Lett. 92, 171910 (2008)
  • 6. A.F. Mayadas, M. Shatzkes, Phys. Rev. B 1, 1382 (1970)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv118n5059kz
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