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Number of results
2010 | 118 | 5 | 859-860

Article title

Model of Anisotropic Electrical Resistivity in Rough Thin Films

Content

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EN

Abstracts

EN
In this work a new model of electrical resistivity is proposed in order to study the relationship between surface roughness geometry and thin films resistivity. The model is based on the numerical dynamic averaging of electron mean free path over whole simulated structure of rough film. For current-in-plane configuration the resistivity increases with decreasing film thickness faster than for current-perpendicular-to-plane one. Our simulations showed that big roughness depth and fine in-plane spatial period of roughness are crucial factors increasing the resistivity of ultrathin metallic layers.

Keywords

Contributors

author
  • Department of Physics, Technical University of Radom, I. Krasickiego 54, 26-600 Radom, Poland
  • Department of Physics, Technical University of Radom, I. Krasickiego 54, 26-600 Radom, Poland

References

  • 1. K. Fuchs, Proc. Cambridge Philos. Soc. 34, 100 (1938)
  • 2. E.H. Sondheimer, Adv. Phys. 1, 1 (1952)
  • 3. T. Szumiata, M. Gzik-Szumiata, K. Brzózka, Mater. Sci. Poland 26, 1039 (2008)
  • 4. T. Szumiata, M. Gzik-Szumiata, K. Brzózka, Acta Phys. Superfic. 11, 126 (2009)
  • 5. J.S. Jin, J.S. Lee, O. Kwon, Appl. Phys. Lett. 92, 171910 (2008)
  • 6. A.F. Mayadas, M. Shatzkes, Phys. Rev. B 1, 1382 (1970)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv118n5059kz
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