Time-Resolved Studies of Gallium Nitride Doped with Gadolinium

• Authors: B. Witek , A. Wysmołek , M. Kamińska , A. Twardowski , M. Potemski , M. Boćkowski , I. Grzegory
• Languages of publication: EN

Abstracts

EN

Time-resolved photoluminescence experiments on high quality bulk GaN doped with Gd are presented. It was found that the decay time of Gd-related transitions observed for 4.2 K around 1.78 eV is of about 3 ms. Such a long decay time strongly supports the identification of this emission band as due to transitions between Gd³+(4f⁷) levels. The decay time measured for Gd-related transitions observed in the UV spectral range, close to the GaN band-gap, was found to be much faster than 1 μs. This suggests that these emission lines could hardly be correlated with internal transitions within Gd³+(4f⁷). Possible origin of the Gd-related UV luminescence is discussed.

Keywords

EN

78.55.Cr   75.50.Pp   71.55.-i   71.35.Ji  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1425-1430

Dates

published

2008-11

received

2008-06-07

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Identifiers

DOI

10.12693/APhysPolA.114.1425