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Number of results
2008 | 114 | 5 | 1425-1430

Article title

Time-Resolved Studies of Gallium Nitride Doped with Gadolinium

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EN

Abstracts

EN
Time-resolved photoluminescence experiments on high quality bulk GaN doped with Gd are presented. It was found that the decay time of Gd-related transitions observed for 4.2 K around 1.78 eV is of about 3 ms. Such a long decay time strongly supports the identification of this emission band as due to transitions between Gd³+(4f⁷) levels. The decay time measured for Gd-related transitions observed in the UV spectral range, close to the GaN band-gap, was found to be much faster than 1 μs. This suggests that these emission lines could hardly be correlated with internal transitions within Gd³+(4f⁷). Possible origin of the Gd-related UV luminescence is discussed.

Keywords

Contributors

author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Grenoble High Magnetic Fields Laboratory, BP 166X, F-38042 Grenoble Cedex 9, France
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv114n565kz
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