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2008 | 113 | 3 | 1035-1038
Article title

Influence of Semiconductor Bands Bending on Exciton Photoluminescence

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Content
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Languages of publication
EN
Abstracts
EN
A theoretical model for calculation of the Wannier-Mott exciton distribution in semiconductor sample accounting for the energy bands bending near semiconductor surface is presented. It is shown that the exciton distribution essentially depends on the surface potential under certain sample surface and bulk parameters. Changing the surface potential value we can study the exciton photoluminescence from the illuminated surface and from a thin layer near this surface.
Keywords
EN
Publisher

Year
Volume
113
Issue
3
Pages
1035-1038
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
  • Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
References
  • 1. F. Henneberger, S. Schmitt-Rink, E.O. Göbel, Optics of Semiconductor Nanostructures, Akademie Verlag, Berlin 1993
  • 2. A. Konin, J. Phys., Condens. Matter 19, 016214 (2007)
  • 3. K. Kash, J.M. Worlock, M.D. Sturge, P. Grabbe, J.P. Harbison, A. Scherer, P.S.D. Lin, Appl. Phys. Lett. 53, 782 (1988)
  • 4. K. Brunner, G. Abstreiter, M. Walther, G. Böhm, G. Tärnkle, Surf. Sci. 267, 218 (1992)
  • 5. J.Y. Marzin, J.M. Gerard, A. Izrael, D. Barrier, G. Bastard, Phys. Rev. Lett. 73, 716 (1994)
  • 6. V.L. Bonch-Bruevich, S.G. Kalashnikov, Physics of Semiconductors, Nauka, Moscow 1977 (in Russian)
  • 7. G.P. Peka, Physical Effects on Semiconductor Surface, Vissha Shkola, Kiev 1984 (in Russian)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n356kz
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