Influence of Semiconductor Bands Bending on Exciton Photoluminescence

• Authors: A. Konin
• Languages of publication: EN

Abstracts

EN

A theoretical model for calculation of the Wannier-Mott exciton distribution in semiconductor sample accounting for the energy bands bending near semiconductor surface is presented. It is shown that the exciton distribution essentially depends on the surface potential under certain sample surface and bulk parameters. Changing the surface potential value we can study the exciton photoluminescence from the illuminated surface and from a thin layer near this surface.

Keywords

EN

71.35.-y; 71.35.Cc

Discipline

• 71.35.Cc: Intrinsic properties of excitons; optical absorption spectra
• 71.35.-y: Excitons and related phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1035-1038

Dates

published

2008-03

received

2007-08-26

Contributors

author

A. Konin

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

References

• 1. F. Henneberger, S. Schmitt-Rink, E.O. Göbel, Optics of Semiconductor Nanostructures, Akademie Verlag, Berlin 1993
• 2. A. Konin, J. Phys., Condens. Matter 19, 016214 (2007)
• 3. K. Kash, J.M. Worlock, M.D. Sturge, P. Grabbe, J.P. Harbison, A. Scherer, P.S.D. Lin, Appl. Phys. Lett. 53, 782 (1988)
• 4. K. Brunner, G. Abstreiter, M. Walther, G. Böhm, G. Tärnkle, Surf. Sci. 267, 218 (1992)
• 5. J.Y. Marzin, J.M. Gerard, A. Izrael, D. Barrier, G. Bastard, Phys. Rev. Lett. 73, 716 (1994)
• 6. V.L. Bonch-Bruevich, S.G. Kalashnikov, Physics of Semiconductors, Nauka, Moscow 1977 (in Russian)
• 7. G.P. Peka, Physical Effects on Semiconductor Surface, Vissha Shkola, Kiev 1984 (in Russian)

Identifiers

DOI

10.12693/APhysPolA.113.1035