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2008 | 113 | 3 | 1001-1004
Article title

The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN

Content
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Languages of publication
EN
Abstracts
EN
The two-dimensional gas in AlGaN/AlN/GaN heterostucture with a very thin (0.6 nm) AlN spacer was investigated by conductivity relaxation measurements in 86-300 K temperature range. The results show the presence of two exponential relaxation processes characterized by different characteristic time constants. Parameters of the fast and slow components of the processes differently depend on the electric field and temperature. The fast process is attributed to influence of the electric field on the barrier formed by the spacer, while the slow process is attributed to the hot-electron capture out of the channel followed by electron thermal release.
Keywords
EN
Year
Volume
113
Issue
3
Pages
1001-1004
Physical description
Dates
published
2008-03
received
2007-08-26
References
  • 1. M. Ramonas, A. Matulionis, J. Liberis, L. Eastman, X. Chen, Y.J. Sun, Phys .Rev. B 71, 075324 (2005)
  • 2. S. Vitusevich, S. Daniliuk, N. Klein, M. Petrychuk, A. Avksentyev, V. Sokolov, V. Kochelap, A. Beliaev, V. Tilak, J. Smart, . A. Vertiatchich, L. Eastman, Appl. Phys. Lett. 82, 748 (2003)
  • 3. A.P. Zhang, L.B. Rowland, E.B. Kaminsky, V. Tilak, J.C. Grande, J. Teetsov, A. Vertiatchikh, L.F. Eastman, J. Electron. Mater. 32, 388 (2003)
  • 4. B. Shen, T. Someaya, Y. Arakawa, Appl. Phys. Lett. 76, 2746 (2000)
  • 5. O. Mitrofanov, M. Manfra, Appl. Phys. Lett. 84, 422 (2004)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n348kz
Identifiers
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