The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN

• Authors: L. Ardaravičius , O. Kiprijanovič , J. Liberis
• Languages of publication: EN

Abstracts

EN

The two-dimensional gas in AlGaN/AlN/GaN heterostucture with a very thin (0.6 nm) AlN spacer was investigated by conductivity relaxation measurements in 86-300 K temperature range. The results show the presence of two exponential relaxation processes characterized by different characteristic time constants. Parameters of the fast and slow components of the processes differently depend on the electric field and temperature. The fast process is attributed to influence of the electric field on the barrier formed by the spacer, while the slow process is attributed to the hot-electron capture out of the channel followed by electron thermal release.

Keywords

EN

72.20.Jv; 73.40.Kp; 73.50.Fq

Discipline

• 73.50.Fq: High-field and nonlinear effects
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1001-1004

Dates

published

2008-03

received

2007-08-26

Contributors

author

L. Ardaravičius

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

O. Kiprijanovič

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

J. Liberis

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

References

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• 3. A.P. Zhang, L.B. Rowland, E.B. Kaminsky, V. Tilak, J.C. Grande, J. Teetsov, A. Vertiatchikh, L.F. Eastman, J. Electron. Mater. 32, 388 (2003)
• 4. B. Shen, T. Someaya, Y. Arakawa, Appl. Phys. Lett. 76, 2746 (2000)
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Identifiers

DOI

10.12693/APhysPolA.113.1001