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2005 | 107 | 1 | 137-141
Article title

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

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Languages of publication
EN
Abstracts
EN
New shallow acceptor magnetoabsorption lines in THz range have been discovered under bandgap photoexcitation in strained Ge/GeSi multiple-quantum-well heterostructures. It is shown, both theoretically and experimentally, that the resonant absorption results from the photoionization of A^+-centers and from 1s → 2p_+-type transitions from the ground state of the barrier-situated A^0-centers into excited states in the 1st and 2nd electronic subbands. The shallowest discovered ground acceptor states (E_B≤0.5 meV) are attributed to the "barrier-spaced" acceptors (a hole bound with an acceptor ion in the neighboring Ge quantum well).
Keywords
EN
Publisher

Year
Volume
107
Issue
1
Pages
137-141
Physical description
Dates
published
2005-01
received
2004-08-22
Contributors
author
  • Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia
author
  • Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia
author
  • Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia
author
  • Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia
author
  • Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia
author
  • Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia
author
  • Rensselaer Polytechnic Institute, Troy, NY, USA
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n116kz
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