THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

• Authors: V. Aleshkin , Y. Erofeeva , V. Gavrilenko , A. Ikonnikov , D. Kozlov , O. Kuznetsov , D. Veksler
• Languages of publication: EN

Abstracts

EN

New shallow acceptor magnetoabsorption lines in THz range have been discovered under bandgap photoexcitation in strained Ge/GeSi multiple-quantum-well heterostructures. It is shown, both theoretically and experimentally, that the resonant absorption results from the photoionization of A^+-centers and from 1s → 2p_+-type transitions from the ground state of the barrier-situated A^0-centers into excited states in the 1st and 2nd electronic subbands. The shallowest discovered ground acceptor states (E_B≤0.5 meV) are attributed to the "barrier-spaced" acceptors (a hole bound with an acceptor ion in the neighboring Ge quantum well).

Keywords

EN

71.55.Cn; 76.90.+d; 78.67.De

Discipline

• 71.55.Cn: Elemental semiconductors
• 78.67.De: Quantum wells
• 76.90.+d: Other topics in magnetic resonances and relaxations (restricted to new topics in section 76)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 137-141

Dates

published

2005-01

received

2004-08-22

Contributors

author

V. Aleshkin

• Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia

author

Y. Erofeeva

• Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia

author

V. Gavrilenko

• Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia

author

A. Ikonnikov

• Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia

author

D. Kozlov

• Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia

author

O. Kuznetsov

• Institute for Physics of Microstructures, GSP-105, Nizhny Novgorod, 603950, Russia

author

D. Veksler

• Rensselaer Polytechnic Institute, Troy, NY, USA

References

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• 2. V.Ya. Aleshkin, I.V. Erofeeva, V.I. Gavrilenko, A.V. Ikonnikov, D.V. Kozlov, O.A. Kuznetsov, D.B. Veksler, Physica B, 340-342, 840, 2003
• 3. V.Ya. Aleshkin, A.V. Antonov, D.B. Veksler, V.I. Gavrilenko, I.V. Erofeeva, A.V. Ikonnikov, D.V. Kozlov, O.A. Kuznetsov, Fiz. Tverd. Tela, 46, 126, 2004 (Sov. Phys. Solid State, 46, 125, 2004)
• 4. V.Ya. Aleshkin, V.I. Gavrilenko, I.V. Erofeeva, O.A. Kuznetsov, M.D. Moldavskaya, V.L. Vaks, D.B. Veksler, in: Proc. 6th Int. Symp. Nanostructures: Physics and Technology, Ioffe Institute, St.Petersburg (Russia) 1999, p. 356
• 5. V.Ya. Aleshkin, B.A. Andreev, V.I. Gavrilenko, I.V. Erofeeva, D.V. Kozlov, O.A. Kuznetsov, M.D. Moldavskaya, A.V. Novikov, Physica E, 7, 608, 2000
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Identifiers

DOI

10.12693/APhysPolA.107.137