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We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10^{-7} A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO_2 host substrate compared to the native substrate.
Discipline
- 85.60.Gz: Photodetectors (including infrared and CCD detectors)(for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and γ-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments)
- 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)
- 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
- 78.30.Fs: III-V and II-VI semiconductors
- 72.40.+w: Photoconduction and photovoltaic effects
Journal
Year
Volume
Issue
Pages
109-117
Physical description
Dates
published
2005-01
received
2004-08-22
Contributors
author
- Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
- Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
- Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
- Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
- Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA
author
- Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA
author
- Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
- Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
- Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
- Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
- Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
- Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n112kz
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