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2005 | 107 | 1 | 109-117
Article title

Ultrafast Phenomena in Freestanding LT-GaAs Devices

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EN
Abstracts
EN
We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10^{-7} A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO_2 host substrate compared to the native substrate.
Keywords
Contributors
author
  • Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
  • Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
  • Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
  • Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
  • Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA
author
  • Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA
author
  • Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
  • Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
  • Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
  • Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany
author
  • Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
author
  • Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n112kz
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