Ultrafast Phenomena in Freestanding LT-GaAs Devices

• Authors: M. Marso , M. Mikulics , R. Adam , S. Wu , X. Zheng , I. Camara , F. Siebe , A. Förster , R. Güsten , P. Kordoš , R. Sobolewski
• Languages of publication: EN

Abstracts

EN

We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10^{-7} A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO_2 host substrate compared to the native substrate.

Keywords

EN

72.20.Jv; 72.40.+w; 78.30.Fs; 85.60.-q; 85.60.Gz

Discipline

• 85.60.Gz: Photodetectors (including infrared and CCD detectors)(for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and γ-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments)
• 85.60.-q: Optoelectronic devices(see also 42.79.-e Optical elements, devices and systems)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 78.30.Fs: III-V and II-VI semiconductors
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 109-117

Dates

published

2005-01

received

2004-08-22

Contributors

author

M. Marso

• Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany

author

M. Mikulics

• Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany
• Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany

author

R. Adam

• Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany

author

S. Wu

• Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA

author

X. Zheng

• Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA

author

I. Camara

• Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany

author

F. Siebe

• Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany

author

A. Förster

• Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany

author

R. Güsten

• Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany

author

P. Kordoš

• Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany

author

R. Sobolewski

• Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA

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Identifiers

DOI

10.12693/APhysPolA.107.109