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2004 | 105 | 6 | 567-573
Article title

Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells

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EN
Abstracts
EN
Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
Keywords
Publisher

Year
Volume
105
Issue
6
Pages
567-573
Physical description
Dates
published
2004-06
received
2004-05-28
Contributors
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv105n620kz
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