Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells

• Authors: S. Juršėnas , E. Kuokštis , S. Miasojedovas , G. Kurilčik , A. Žukauskas , C. Chen , J. Yang , V. Adivarahan , M. Asif Khan
• Languages of publication: EN

Abstracts

EN

Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.

Keywords

EN

78.55.Cr; 73.21.Fg; 72.20.Jv; 78.47.+p

Discipline

• 78.55.Cr: III-V semiconductors
• 73.21.Fg: Quantum wells
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 6
• Pages: 567-573

Dates

published

2004-06

received

2004-05-28

Contributors

author

S. Juršėnas

• Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania

author

E. Kuokštis

• Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania

author

S. Miasojedovas

• Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania

author

G. Kurilčik

• Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania

author

A. Žukauskas

• Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania

author

C. Chen

• Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

author

J. Yang

• Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

author

V. Adivarahan

• Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

author

M. Asif Khan

• Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

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Identifiers

DOI

10.12693/APhysPolA.105.567