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2004 | 105 | 6 | 567-573
Article title

Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells

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Abstracts
EN
Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
Keywords
Contributors
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius, Lithuania
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
author
  • Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv105n620kz
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