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2002 | 102 | 2 | 259-264
Article title

Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

Content
Title variants
Languages of publication
EN
Abstracts
EN
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
Keywords
Year
Volume
102
Issue
2
Pages
259-264
Physical description
Dates
published
2002-08
received
2001-09-23
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv102n211kz
Identifiers
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