Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

• Authors: D. Klinger , S. Kret , J. Auleytner , D. Żymierska
• Languages of publication: EN

Abstracts

EN

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.

Keywords

EN

61.72.Cc; 61.72.Ff; 61.72.Ji; 61.72.Nn; 61.80.Ba

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.80.Ba: Ultraviolet, visible, and infrared radiation effects (including laser radiation)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.72.Nn: Stacking faults and other planar or extended defects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 2
• Pages: 259-264

Dates

published

2002-08

received

2001-09-23

Contributors

author

D. Klinger

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Kret

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Żymierska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. M. Berti, G. Mazzi, L. Calcagnile, A.V. Drigo, P.G. Merli, A. Migliori, J. Mater. Res., 6, 2120, 1991
• 2. L. Calcagnile, Phys. Status Solidi A, 151, 23, 1995
• 3. D. Klinger, M. Lefeld-Sosnowska, D. Żymierska, J. Auleytner, B. Kozankiewicz, K. Regiński, Phys. Status Solidi A, 171, 389, 1999
• 4. D. Klinger, M. Lefeld-Sosnowska, J. Auleytner, D. Żymierska, L. Nowicki, A. Stonert, S. Kwiatkowski, J. Alloys Comp., 328, 242, 2001
• 5. D.K. Sadana, W. Maszara, J.J. Wortmann, G.A. Rozgonyi, W.K. Chu, J. Electrochem. Soc., 131, 943, 1984
• 6. J. Morawiec, Acta Phys. Pol. A, 85, 819, 1994
• 7. A. Sakai, T. Tatsumi, Appl. Phys. Lett., 64, 52, 1994
• 8. O. Leifeld, R. Hartmann, E. Muller, E. Kaxiras, K. Kern, D. Grutzmacher, Nanotechnology, 10, 122, 1999

Identifiers

DOI

10.12693/APhysPolA.102.259