PL EN


Preferences help
enabled [disable] Abstract
Number of results
2002 | 101 | 5 | 787-794
Article title

X-ray Characterization of Films Formed by Pulsed Laser Deposition on Cold Substrates from YBaCuO Targets

Content
Title variants
Languages of publication
EN
Abstracts
EN
Grazing-incidence X-ray diffraction supplemented with atomic force microscopy and secondary ion mass spectroscopy were applied to the characterization of films deposited by laser ablation on cold substrates from YBaCuO targets and subsequently irradiated with additional laser pulses of lower energy density. Evolution of X-ray diffraction pattern was observed as a function of irradiation dose. For the as-deposited films the pattern was typical of the amorphized solids. For the films irradiated with doses higher than the threshold, the pattern was enriched with the diffraction peaks, whose general features, like peak positions, widths and relative intensities were almost independent of the dose. The size of the crystallites was deduced from the peak widths to be not smaller than 12-16 nm. Comparison of the pattern with patterns of known phases indicates that, apart of the amorphous component, a structure with an admixture of some new metastable or high temperature phase(s) is formed during the process of pulsed laser annealing. The atomic force microscopy observations revealed that the surface roughness shows a pronounced minimum at low irradiation doses. The secondary ion mass spectroscopy investigation confirms that the strongest chemical changes (increase in concentration of yttrium and copper) due to irradiation with higher doses are observed in the near-surface film material.
Keywords
EN
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Solid State Electronics CNR, via Cineto Romano 42, 00-156 Rome, Italy
author
  • Department of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt, Germany
References
  • 1. S. Proyer, E. Stangl, M. Borz, B. Hellebrand, D. Bauerle, Physica C, 257, 1, 1996
  • 2. M.D. Strikovsky, E.B. Klyuenkov, S.V. Gaponov, Appl. Phys. Lett., 63, 1146, 1995
  • 3. T.J. Jackson, S.B. Palmer, J. Phys. D, 27, 1581, 1994
  • 4. V.D. Okunev, Z.A. Samoilenko, V.M. Svistunov, A. Abal'oshev, E. Dynowska, P. Gierłowski, A. Klimov, S.J. Lewandowski, J. Appl. Phys., 85, 7282, 1999
  • 5. D.P. Butler, Z. Celik-Butler, R. Adam, R. Sobolewski, J. Appl. Phys., 85, 1075, 1999
  • 6. V.D. Okunev, Z.A. Samoilenko, A. Abal'oshev, P. Gierłowski, A. Klimov, S.J. Lewandowski, Appl. Phys. Lett., 75, 1949, 1999
  • 7. H. Hiramatsu, Y. Ohki, D.-S. Shin, L.-H. Choi, Y.-T. Kim, Ferroelectric Thin Films VII Symp., Eds. R.E. Jones, R.W. Schwartz, S.R. Summerfelt, I.K. Yoo, Mater. Res. Soc., Warrendale 1999, p. 293
  • 8. A.G. Panfilov, A.I. Rykov, S. Tajima, A. Yamanaka, Phys. Rev. B, 58, 12459, 1998
  • 9. S.J. Lewandowski, G. Jung, V.D. Okunev, Z.A. Samoilenko, V.A. Isaev, A. Abal'oshev, P. Gierłowski, A. Klimov, S. Barbanera, Proc. SPIE, 4086, 518, 2000
  • 10. H. Kwak, K.C. Chou, J. Guo, H.W.K. Tom, Phys. Rev. Lett., 83, 3745, 1999
  • 11. W. Wong-Ng, R.S. Roth, F. Beech, K.L. Davis, Adv. X-ray Anal., 31, 359, 1988
  • 12. PDF-3 Database, ICDD, Newtown Square, PA 1999
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv101n525kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.