PL EN


Preferences help
enabled [disable] Abstract
Number of results
2002 | 101 | 5 | 689-699
Article title

X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure

Content
Title variants
Languages of publication
EN
Abstracts
EN
The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
Keywords
EN
Year
Volume
101
Issue
5
Pages
689-699
Physical description
Dates
published
2002-05
received
2001-08-31
References
  • 1. A. Misiuk, Phys. Status Solidi A, 171, 191, 1999
  • 2. J. Bak-Misiuk, E. Dynowska, A. Misiuk, M. Calamiotou, A. Kozanecki, J. Domagala, D. Kuritsyn, W. Glukhanyuk, A. Georgakilas, J. Trela, J. Adamczewska, Cryst. Research Technol., 36, 997, 01
  • 3. J. Bak-Misiuk, E. Dynowska, J. Adamczewska, J. Domagala, J. Trela, A. Misiuk, J. Kaniewski, K. Reginski, in preparation
  • 4. J. Bak-Misiuk, J. Kaniewski, J. Domagala, K. Reginski, J. Adamczewska, J. Trela, Optoelectr. Rev., 7, 107, 1999
  • 5. J. Bak-Misiuk, J. Adamczewska, J. Domagala, Z.R. Zytkiewicz, J. Trela, A. Misiuk, M. Leszczynski, J. Jun, H.B. Surma, A. Wnuk, J. Alloys Comp., 286, 279, 1999
  • 6. J. Bak-Misiuk, J. Domagala, J. Trela, M. Leszczynski, A. Misiuk, J. Hartwig, E. Prieur, Acta Phys. Pol. A, 89, 405, 1996
  • 7. A. Misiuk, Mater. Phys. Mech., 1, 119, 00
  • 8. P.F. Fewster, N.L. Andrew, J. Appl. Crystallogr., 28, 451, 1995
  • 9. J. Bak-Misiuk, M. Leszczynski, J. Domagala, Z. Zytkiewicz, J. Appl. Phys., 78, 6994, 1995
  • 10. J. Domagala, J. Bak-Misiuk, J. Adamczewska, Z. Zytkiewicz, E. Dynowska, J. Trela, D. Dobosz, E. Janik, M. Leszczynski, Phys. Status Solidi A, 171, 289, 1999
  • 11. B.K. Tanner, A.G. Turnbull, C.R. Stanley, A.H. Kean, M. McElhinney, Appl. Phys. Lett., 59, 2272, 1991
  • 12. M.S. Goorsky, M. Meskinpour, D.C. Strit, T.R. Block, J. Phys. D, Appl. Phys., 28, A92, 1996
  • 13. J.R. Buschert, F.C. Peiris, N. Samarth, H. Luo, J.K. Furdyna, Phys. Rev. B, 49, 4619, 1994
  • 14. Properties of Aluminium Gallium Arsenide, Ed. Sadao Adachi, EMIS Datareviews Series No 7, London 1993, p. 18
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv101n513kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.