X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure

• Authors: J. Bąk-Misiuk , J. Adamczewska , A. Misiuk , K. Regiński , W. Wierzchowski , K. Wieteska , A. Kozanecki , D. Kuritsyn , W. Glukhanyuk , J. Trela
• Languages of publication: EN

Abstracts

EN

The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.

Keywords

EN

81.40.-z; 68.55.Ln

Discipline

• 81.40.-z: Treatment of materials and its effects on microstructure, nanostructure, and properties
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 101
• Issue: 5
• Pages: 689-699

Dates

published

2002-05

received

2001-08-31

Contributors

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Adamczewska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Regiński

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

A. Kozanecki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Kuritsyn

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Glukhanyuk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Trela

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.101.689