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2001 | 100 | 3 | 301-318
Article title

Layered Semiconductors and Related Systems

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EN
Abstracts
EN
The general properties of the layered transition metal dichalcogenides and the possibility to modify these materials by intercalation are reviewed. Examples are given of experimental results obtained by using angle-resolved photoelectron spectroscopy and very-low-energy electron diffraction. The possibility to use layered semiconductors as model systems in studies of e.g. Schottky barriers and surface photovoltage is exemplified by the Rb/WSe_2 system. Attention is also paid to the use of van der Waals epitaxy in interface studies, and its possible practical applications. The potential of layered semiconductors like WSe_2 in solar cell applications is also mentioned.
Keywords
Year
Volume
100
Issue
3
Pages
301-318
Physical description
Dates
published
2001-09
received
2001-06-01
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv100n321kz
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