Layered Semiconductors and Related Systems

• Authors: H. Starnberg
• Languages of publication: EN

Abstracts

EN

The general properties of the layered transition metal dichalcogenides and the possibility to modify these materials by intercalation are reviewed. Examples are given of experimental results obtained by using angle-resolved photoelectron spectroscopy and very-low-energy electron diffraction. The possibility to use layered semiconductors as model systems in studies of e.g. Schottky barriers and surface photovoltage is exemplified by the Rb/WSe_2 system. Attention is also paid to the use of van der Waals epitaxy in interface studies, and its possible practical applications. The potential of layered semiconductors like WSe_2 in solar cell applications is also mentioned.

Keywords

EN

71.20.Nr; 71.20.Tx; 79.60.Bm; 79.60.Jv

Discipline

• 71.20.Tx: Fullerenes and related materials; intercalation compounds
• 79.60.Jv: Interfaces; heterostructures; nanostructures
• 79.60.Bm: Clean metal, semiconductor, and insulator surfaces
• 71.20.Nr: Semiconductor compounds

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 100
• Issue: 3
• Pages: 301-318

Dates

published

2001-09

received

2001-06-01

Contributors

author

H. Starnberg

• Department of Physics, Göteborg University and Chalmers University of Technology, 412 96 Göteborg, Sweden

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Identifiers

DOI

10.12693/APhysPolA.100.301