Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

• Authors: Heike Angermann , Orman Gref , Bert Stegemann
• Languages of publication: EN

Abstracts

EN

Ultrathin SiO2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).

Keywords

EN

Wet-chemical surfaces pre-treatment; Hydrogen-termination; Silicon; Silicon oxide interface; Surfaces photovoltage; Interface states

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 6
• Pages: 1472-1481

Dates

published

1 - 12 - 2011

online

15 - 10 - 2011

Contributors

author

Heike Angermann

• Helmholtz-Zentrum Berlin, Institut für Silizium-Photovoltaik, Kekuléstraße 5, 12489, Berlin, Germany

author

Orman Gref

• Helmholtz-Zentrum Berlin, Institut für Silizium-Photovoltaik, Kekuléstraße 5, 12489, Berlin, Germany

author

Bert Stegemann

• Hochschule für Technik und Wirtschaft (HTW), Wilhelminenhofstr. 75a, 12459, Berlin, Germany

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Identifiers

DOI

10.2478/s11534-011-0053-0