Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results

Journal

2011 | 9 | 6 | 1472-1481

Article title

Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Content

Title variants

Languages of publication

EN

Abstracts

EN
Ultrathin SiO2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).

Publisher

Journal

Year

Volume

9

Issue

6

Pages

1472-1481

Physical description

Dates

published
1 - 12 - 2011
online
15 - 10 - 2011

Contributors

  • Helmholtz-Zentrum Berlin, Institut für Silizium-Photovoltaik, Kekuléstraße 5, 12489, Berlin, Germany
author
  • Helmholtz-Zentrum Berlin, Institut für Silizium-Photovoltaik, Kekuléstraße 5, 12489, Berlin, Germany
  • Hochschule für Technik und Wirtschaft (HTW), Wilhelminenhofstr. 75a, 12459, Berlin, Germany

References

  • [1] B. Stegemann, A. Schoepke, D. Sixtensson, B. Gorka, T. Lussky, M. Schmidt, Physica E 41, 1019 (2009) http://dx.doi.org/10.1016/j.physe.2008.08.012[Crossref]
  • [2] B. Stegemann, D. Sixtensson, T. Lussky, A. Schoepke, I. Didschuns, B. Rech, M. Schmidt, Nanotechnology 19, 424020 (2008) http://dx.doi.org/10.1088/0957-4484/19/42/424020[Crossref]
  • [3] S. Schaefer et al., Solid State Sci. 10, 1314e1321 (2008) http://dx.doi.org/10.1016/j.solidstatesciences.2007.12.039[Crossref]
  • [4] B. Stegemann, A. Schoepke, M. Schmidt, J. Non-Cryst. Solids 354, 2100 (2008) http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.035[Crossref]
  • [5] T. M. Buck and F. S. McKim, J. Electrochem. Soc. 105, 709 (1958) http://dx.doi.org/10.1149/1.2428707[Crossref]
  • [6] T. Ohmi, M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe, IEEE Trans. Electron Devices 39, 537 (1992) http://dx.doi.org/10.1109/16.123475[Crossref]
  • [7] P. O. Hahn and M. Hezler, J. Vac Sci. Technol. A2, 574 (1984) [Crossref]
  • [8] B. J. Mrstik, V. V. Afanas’ev, A. Stesmans, P. J. Mcmarr, R. K. Lawrence, J. Appl. Phys. 85, 6577 (1999) http://dx.doi.org/10.1063/1.370164[Crossref]
  • [9] T. Aoyama, T. Yamazaki, T. Ito, J. Electrochem. Soc. 143, 2280 (1996) http://dx.doi.org/10.1149/1.1836994[Crossref]
  • [10] L. Lai, K. J. Hebert, E. A. Irene, J. Vac. Sci. Technol. B 17, 53 (1999)
  • [11] P. Drummond, A. Kshirsagar, J. Ruzyllo, Solid State Electron. 55, 29 (2010) http://dx.doi.org/10.1016/j.sse.2010.09.005[Crossref]
  • [12] Y.A. Chabal, G. S. Higashi, K. Raghavachari, V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989)
  • [13] H. Angermann, Appl. Surf. Sci. 254, 8067 (2008) http://dx.doi.org/10.1016/j.apsusc.2008.03.022[Crossref]
  • [14] E. Pincik et al., Appl. Surf. Sci. 256,19, 5757 (2010) http://dx.doi.org/10.1016/j.apsusc.2010.03.096[Crossref]
  • [15] W.-B. Kim, T. Matsomoto, H. Kobayashi, Appl. Phys. Lett. 93, 072101 (2008) http://dx.doi.org/10.1063/1.2970040[Crossref]
  • [16] J.-P. Becker, D. Pysch, A. Leimstoll, M. Hermle, S. W. Glunz, Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21–25. Sept. 2009, Hamburg, Germany, (Hamburg, 2009)
  • [17] H. F. Okorn-Schmidt, IBM J. Res. Develop. 43, 315 (1999) http://dx.doi.org/10.1147/rd.433.0351[Crossref]
  • [18] H. Noguchi, S. Adachi, Appl. Sur. Sci. 246, 139 (2005) http://dx.doi.org/10.1016/j.apsusc.2004.11.003[Crossref]
  • [19] M. Grundner, R. Schulz, Conference Proceedings No. 167, (American Vacuum Soc. 1988) 329
  • [20] K. Heilig, Experimentelle Technik der Physik 14, 135 (1968)
  • [21] Th. Dittrich, Th. Bitzer, H. Angermann, H. J. Lewerenz, H. Flietner, J. Electrochem. Soc. 141 3595 (1994) http://dx.doi.org/10.1149/1.2059377[Crossref]
  • [22] H. Angermann, Anal. Bioanal. Chem. 374, 676 (2002) http://dx.doi.org/10.1007/s00216-002-1450-4[Crossref]
  • [23] W. Kern, J. Electrochem. Soc. 137, 1987(1990) http://dx.doi.org/10.1149/1.2086825[Crossref]
  • [24] W. Henrion, M. Rebien, H. Angermann, A. Röseler, Appl. Surf. Sci. 202, 199 (2002) http://dx.doi.org/10.1016/S0169-4332(02)00923-6[Crossref]
  • [25] B. Stegemann, D. Sixtensson, T. Lussky, U. Bloeck, M. Schmidt, Chimia 61, 826 (2007) http://dx.doi.org/10.2533/chimia.2007.826[Crossref]
  • [26] A. Sarikov, B. Stegemann, M. Schmidt, Thin Solid Films 518, 4662 (2010) http://dx.doi.org/10.1016/j.tsf.2009.12.054[Crossref]
  • [27] E. Pinčík, H. Kobayashi, J. Rusnák, M. Takahashi, R. Brunner, M. Jergel, A. Morales-Acevedo, L. Ortega, J. Kákoš, Appl. Surf. Sci. 252, 7713 (2006). http://dx.doi.org/10.1016/j.apsusc.2006.03.072[Crossref]
  • [28] J. Mizsei, Solid State Electron. 46, 235 (2002) http://dx.doi.org/10.1016/S0038-1101(01)00300-8[Crossref]
  • [29] K. Heilig, Solid State Electron. 27, 395 (1984) http://dx.doi.org/10.1016/0038-1101(84)90176-X[Crossref]
  • [30] Y. W. Lam, Phys. Rev. D: Appl. Phys. 4, 1370 (1971) http://dx.doi.org/10.1088/0022-3727/4/9/318[Crossref]
  • [31] W. Henrion, A. Röseler, H. Angermann, M. Rebien, Phys. Stat. Sol. (a) 175, 121 (1999) http://dx.doi.org/10.1002/(SICI)1521-396X(199909)175:1<121::AID-PSSA121>3.0.CO;2-D[Crossref]
  • [32] H. Angermann, W. Henrion, M. Rebien, A. Röseler, Appl. Surf. Sci. 235, 322 (2004) http://dx.doi.org/10.1016/j.apsusc.2004.05.105[Crossref]
  • [33] H. Angermann, L. Korte, J. Rappich, E. Conrad, I. Sieber, M. Schmidt, K. Hübener, J. Hauschild, Thin Solid Films 516, 6775 (2008) http://dx.doi.org/10.1016/j.tsf.2007.12.033[Crossref]
  • [34] P. Allongue, C. H. Villeneuve, S. Morin, R. Boukherroub, D.D.M. Wayner, Electrochim. Acta 45, 4591 (2000) http://dx.doi.org/10.1016/S0013-4686(00)00610-1[Crossref]
  • [35] H. Angermann, J. Rappich, C. Klimm, Cent. Eur. J. Phys. 7, 363 (2009) http://dx.doi.org/10.2478/s11534-009-0055-3[Crossref]
  • [36] A. Laades, Preparation and Characterization of Amorphous/Crystalline Silicon Heterojunctions, PhD Thesis, Technische Universität Berlin, (Berlin, Germany, 2005).
  • [37] A. Goetzberger, V. Heine, E. H. Nicollian, Appl. Phys. Lett. 12, 95 (1968) http://dx.doi.org/10.1063/1.1651913[Crossref]
  • [38] E.H. Pointdexter, G.J. Geraldi, M.E. Rueckel, P.J. Caplan, N.M. Johnsohn, D.K. Biegelsen, J. Appl. Phys. 56, 2844 (1984) http://dx.doi.org/10.1063/1.333819[Crossref]
  • [39] H. Flietner, Mat. Sci. Forum 185, 73 (1995) http://dx.doi.org/10.4028/www.scientific.net/MSF.185-188.73[Crossref]
  • [40] P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984) http://dx.doi.org/10.1063/1.332937[Crossref]
  • [41] E. H. Pointdexter, P.J. Caplan, B.E. Deal, and R.R. Radzouk, J. Appl. Phys. 52, 879 (1981) http://dx.doi.org/10.1063/1.328771[Crossref]
  • [42] K. Ohishi and T. Hattori, Jpn. J. Appl. Phys. 33, L675 (1994) http://dx.doi.org/10.1143/JJAP.33.L675[Crossref]

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-011-0053-0
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.