Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

• Authors: Tadeusz Lucinski , Piotr Chomiuk
• Languages of publication: EN

Abstracts

EN

We review selected results concerning the interlayer exchange coupling in Fe/SixFe1−x
, Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.

Keywords

EN

magnetic multilayers; antiferromagnetic coupling

• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 2
• Pages: 276-286

Dates

published

1 - 4 - 2011

online

20 - 2 - 2011

Contributors

author

Tadeusz Lucinski

• Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland

author

Piotr Chomiuk

• Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland

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Identifiers

DOI

10.2478/s11534-010-0145-2