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Number of results

Journal

2011 | 9 | 2 | 276-286

Article title

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

Content

Title variants

Languages of publication

EN

Abstracts

EN
We review selected results concerning the interlayer exchange coupling in Fe/SixFe1−x
, Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.

Publisher

Journal

Year

Volume

9

Issue

2

Pages

276-286

Physical description

Dates

published
1 - 4 - 2011
online
20 - 2 - 2011

Contributors

  • Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland
author
  • Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-010-0145-2
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