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Journal
2011 | 9 | 2 | 276-286
Article title

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

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EN
Abstracts
EN
We review selected results concerning the interlayer exchange coupling in Fe/SixFe1−x
, Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.
Publisher

Journal
Year
Volume
9
Issue
2
Pages
276-286
Physical description
Dates
published
1 - 4 - 2011
online
20 - 2 - 2011
Contributors
  • Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland
author
  • Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0145-2
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