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In the paper results of investigation of the influence of low concentration hydrogen on stress changes in thin catalytic metal films were discussed. The concentration of H2 was altered from 6 ppm to 1% of hydrogen (6N) in nitrogen (6N). Silicon beams covered with palladium or platinum films of various thicknesses were anchored at one end and their deflection at the other end was measured by atomic force microscope. Stress changes were determined by application of modified Stoney formula and compared with results of computer modelling. The influence of stress caused by hydrogen absorption on the alteration of output characteristics of AIII-N based hydrogen sensors was excluded. The time dependence of stress in metallic films for various hydrogen concentrations indicated dissociation limited mechanism of hydrogen absorption.
Publisher
Journal
Year
Volume
Issue
Pages
392-397
Physical description
Dates
published
1 - 4 - 2011
online
20 - 2 - 2011
Contributors
author
- Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland
author
- Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland
author
- Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland
author
- Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland
author
- Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland
References
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0118-5