Influence of hydrogen absorption on stress changes in thin catalytic metal films dedicated for sensors application

• Authors: Joanna Prazmowska , Tomasz Piasecki , Adam Szyszka , Regina Paszkiewicz , Marek Tłaczała
• Languages of publication: EN

Abstracts

EN

In the paper results of investigation of the influence of low concentration hydrogen on stress changes in thin catalytic metal films were discussed. The concentration of H2 was altered from 6 ppm to 1% of hydrogen (6N) in nitrogen (6N). Silicon beams covered with palladium or platinum films of various thicknesses were anchored at one end and their deflection at the other end was measured by atomic force microscope. Stress changes were determined by application of modified Stoney formula and compared with results of computer modelling. The influence of stress caused by hydrogen absorption on the alteration of output characteristics of AIII-N based hydrogen sensors was excluded. The time dependence of stress in metallic films for various hydrogen concentrations indicated dissociation limited mechanism of hydrogen absorption.

Keywords

EN

thin metallic films; catalytic dissociation; hydrogen sensors; stress

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2011
• Volume: 9
• Issue: 2
• Pages: 392-397

Dates

published

1 - 4 - 2011

online

20 - 2 - 2011

Contributors

author

Joanna Prazmowska

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland

author

Tomasz Piasecki

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland

author

Adam Szyszka

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland

author

Regina Paszkiewicz

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland

author

Marek Tłaczała

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego str. 11/17, 50-372, Wroclaw, Poland

References

• [1] R. Ramachadran, R. K. Menon, Int. J. Hydrogen Energ. 23, 593 (1998) http://dx.doi.org/10.1016/S0360-3199(97)00112-2[Crossref]
• [2] R. Dus, E. Nowicka, R. Nowakowski, Acta Phys. Pol. A114, S29 (2008)
• [3] W. Fenzl, G. Goettler, S. Schuppler, J. Pelis, Z. Phys. B Con. Mat. 84, 229 (1991) http://dx.doi.org/10.1007/BF01313541[Crossref]
• [4] A. L. Cabrera, R. Aguayo-Soto, Catal. Lett. 45, 79 (1997) http://dx.doi.org/10.1023/A:1019078419537[Crossref]
• [5] R. Feenstra, R. Griessen, D. G. de Groot, J. Phys. F Met. Phys. 16, 1933 (1986) http://dx.doi.org/10.1088/0305-4608/16/12/008[Crossref]
• [6] H. Morkoç, R. Cingolani, B. Gil, Mater. Res. Innov. 3, 97 (1999) http://dx.doi.org/10.1007/s100190050132[Crossref]
• [7] J. Kim, D. Cho, R. S. Muller, In: E. Obermeier (Ed.), Trransducers’01, Eurosensors XV, Jun 10–14, 2001, Munich, Germany (Springer, Berlin, Germany, 2001) 662
• [8] W. Fang, J. A. Wickert, J. Micromech. Microeng. 5, 276 (1995) http://dx.doi.org/10.1088/0960-1317/5/4/003[Crossref]
• [9] Y. Min, Y. Kim, J. Micromech. Microeng. 10, 314 (2000) http://dx.doi.org/10.1088/0960-1317/10/3/303[Crossref]
• [10] J. Cao, PhD Thesis, Ruhr-Universität Bohum (Bochum, Germany, 2007)
• [11] U. Laudahn et al., Appl. Phys. Lett. 74, 647 (1999) http://dx.doi.org/10.1063/1.123028[Crossref]
• [12] G. G. Stoney, P. Roy. Soc. A-Math. Phy. 82, 172 (1909) http://dx.doi.org/10.1098/rspa.1909.0021[Crossref]
• [13] E. Finot, A. Passian, T. Thundat, Sensors 8, 3497 (2008) http://dx.doi.org/10.3390/s8053497[Crossref]
• [14] T.P. Leervad Pedersen et al., Thin Solid Films 458, 299 (2004) http://dx.doi.org/10.1016/j.tsf.2003.12.040[Crossref]
• [15] M. Liu, B. Shi, J. Guo, X. Cai, H. Song, Scripta Mater. 49, 167 (2003) http://dx.doi.org/10.1016/S1359-6462(03)00211-2[Crossref]
• [16] A. Fabre, E. Finot, J. Demoment, S. Contreras, J. Alloy. Compd. 356–357, 372 (2003) http://dx.doi.org/10.1016/S0925-8388(03)00269-X[Crossref]
• [17] W. Martienssen, H. Warlimont, Springer Handbook of Condensed Matter and Materials Data (Springer, Berlin Heidelberg, 2005) http://dx.doi.org/10.1007/3-540-30437-1[Crossref]
• [18] M. S. Shur, A.D. Bykhovski, R. Gaska, MRS Internet J. N. S. R. 4S1, G1.6 (1999)
• [19] K. Jeganathan, T. Ide, S.X.Q. Shen, M. Shimizu, H. Okumura, Phys. Status Solidi B 228, 613 (2001) http://dx.doi.org/10.1002/1521-3951(200111)228:2<613::AID-PSSB613>3.0.CO;2-U[Crossref]
• [20] H. Lüth, In: H. Lüth (Ed.), Solid surfaces, interfaces and thin films (Springer-Verlag, Berlin, Heidelberg, New York, 2001) 499
• [21] C. Lemier, J. Weissmüller, Acta Mater. 55, 1241 (2007) http://dx.doi.org/10.1016/j.actamat.2006.09.030[Crossref]
• [22] J. Prazmowska, A. Szyszka, R. Paszkiewicz, M. Tłaczała, Cent. Eur. J. Phys. (in press)
• [23] Y. Li, Y.T. Cheng, Int. J. Hydrogen Energ. 21, 281 (1996) http://dx.doi.org/10.1016/0360-3199(95)00094-1[Crossref]

Identifiers

DOI

10.2478/s11534-010-0118-5