PL EN


Preferences help
enabled [disable] Abstract
Number of results
Journal
2011 | 9 | 1 | 242-249
Article title

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Content
Title variants
Languages of publication
EN
Abstracts
EN
A set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U
ac - V
G curves). By comparing the A-DLTS spectra, U
ac - V
G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.
Publisher

Journal
Year
Volume
9
Issue
1
Pages
242-249
Physical description
Dates
published
1 - 2 - 2011
online
24 - 9 - 2010
Contributors
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia, hockicko@fyzika.uniza.sk
author
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
author
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
References
  • [1] S. Zaima, K. Onoda, Y. Koida, Y. Yasuda, J. Appl. Phys. 68, 6304 (1990) http://dx.doi.org/10.1063/1.346873[Crossref]
  • [2] H. Yano, T. Kimoto, H. Matsunami, M. Bassler, G. Pensl, Mater. Sci. Forum 338, 1109 (2000) http://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.1109[Crossref]
  • [3] Asuha, T. Yuasa, O. Maida, H. Kobayashi, Appl. Phys. Lett. 80, 4175 (2002) http://dx.doi.org/10.1063/1.1482147[Crossref]
  • [4] H. Kobayashi, Asuha, O. Maida, M. Takahashi, H. Iwasa, J. Appl. Phys. 94, 7328 (2003) http://dx.doi.org/10.1063/1.1621720[Crossref]
  • [5] Asuha, T. Kobayashi, M. Takahashi, M. Iwasa, H. Kobayashi, Surf. Sci. 547, 275 (2003) http://dx.doi.org/10.1016/j.susc.2003.09.016[Crossref]
  • [6] H. Kobayashi, T. Sakurai, M. Takahashi, Phys. Rev. B 67, 115305 (2003) http://dx.doi.org/10.1103/PhysRevB.67.115305[Crossref]
  • [7] Asuha et al., Surf. Sci. 600, 2523 (2006) http://dx.doi.org/10.1016/j.susc.2006.04.015[Crossref]
  • [8] K. Imamura, O. Maida, K. Hattori, M. Takahashi, H. Kobayashi, J. Appl. Phys. 100, 114910 (2006) http://dx.doi.org/10.1063/1.2395601[Crossref]
  • [9] T. Matsumoto et al., Microelectron. Eng. 86, 1939 (2009) http://dx.doi.org/10.1016/j.mee.2009.03.080[Crossref]
  • [10] E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982)
  • [11] P. Masson, J.L. Autran, M. Houssa, X. Garros, Ch. Leroux, Appl. Phys. Lett. 81, 3392 (2002) http://dx.doi.org/10.1063/1.1518561[Crossref]
  • [12] N. Inoue, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, Jpn. J. Appl. Phys. 46, 6480 (2007) http://dx.doi.org/10.1143/JJAP.46.6480[Crossref]
  • [13] O. Maida, A. Asano, M. Takahashi, H. Iwasa, H. Kobayashi, Surf. Sci. 542, 244 (2003) http://dx.doi.org/10.1016/S0039-6028(03)00985-3[Crossref]
  • [14] Y. Yamashita, Y. Nakato, H. Kato, Y. Nishioka, H. Kobayashi, Appl. Surf. Sci. 117-118, 176 (1997) http://dx.doi.org/10.1016/S0169-4332(97)80074-8[Crossref]
  • [15] Y. Yamashita, K. Namba, Y. Nakato, Y. Nishioka, H. Kobayashi, J. Appl. Phys. 79, 7051 (1996) http://dx.doi.org/10.1063/1.361472[Crossref]
  • [16] P. Bury, I. Jamnický, J. Ďurček, Phys. Status Solidi A 126, 151 (1991) http://dx.doi.org/10.1002/pssa.2211260117[Crossref]
  • [17] P. Bury, I. Jamnický, Acta Phys. Slovaca 46, 693 (1996)
  • [18] P. Bury et al., Cent. Eur. J. Phys. 7, 237 (2009) http://dx.doi.org/10.2478/s11534-009-0029-5[Crossref]
  • [19] P. Hockicko, P. Sidor, P. Bury, J. Kúdelčík, I. Jamnický, Adv. Elect. Electr. Eng. 7, 373 (2008)
  • [20] P. Bury, P. Hockicko, V.W. Rampton, Acta Phys. Slovaca 53, 189 (2003)
  • [21] H. Frank, Physics and technology of semiconductors (SNTL, Praha, 1990)
  • [22] S.M. Sze, Physics of Semiconductor Devices, 2nd edition (Wiley, New York, 1981)
  • [23] S. Imai et al., Acta Phys. Slovaca 55, 305 (2005)
  • [24] N. Inoue, D.J. Lichtenwalter, J.S. Jur, A.I. Kingon, Jpn. J. Appl. Phys. 46, 6480 (2007) http://dx.doi.org/10.1143/JJAP.46.6480[Crossref]
  • [25] H. Kobayashi et al., J. Appl. Phys. 83, 2098 (1998) http://dx.doi.org/10.1063/1.366943[Crossref]
  • [26] S. Kaschieva et al., Plasma Process. Polym. 3, 237 (2006) http://dx.doi.org/10.1002/ppap.200500080[Crossref]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0038-4
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.