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Number of results

Journal

2011 | 9 | 1 | 242-249

Article title

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Content

Title variants

Languages of publication

EN

Abstracts

EN
A set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U
ac - V
G curves). By comparing the A-DLTS spectra, U
ac - V
G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

Publisher

Journal

Year

Volume

9

Issue

1

Pages

242-249

Physical description

Dates

published
1 - 2 - 2011
online
24 - 9 - 2010

Contributors

  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
author
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
author
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-010-0038-4
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