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Number of results
Journal
2011 | 9 | 1 | 230-241
Article title

Trap-assisted tunnelling current in MIM structures

Content
Title variants
Languages of publication
EN
Abstracts
EN
A new model is presented of current transport in Metal Insulator Metal (MIM) structures by quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer, tunnelling via defects present in the insulating layer plays an important role. Examples of the influence of the material and thickness of the insulating layer, energy distribution of traps, and metal work functions are also provided.
Publisher

Journal
Year
Volume
9
Issue
1
Pages
230-241
Physical description
Dates
published
1 - 2 - 2011
online
24 - 9 - 2010
Contributors
author
  • Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia, juraj.racko@stuba.sk
  • Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
author
  • Technical University of Ilmenau, PF 98684, Ilmenau, Germany
author
  • Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
  • Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
  • Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
  • Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
  • Technical University of Ilmenau, PF 98684, Ilmenau, Germany
  • Slovak Academy of Sciences, Dúbravská cesta 9, 841 04, Bratislava, Slovakia
References
  • [1] J. Frenkel, Phys. Rev. 54, 647 (1938) http://dx.doi.org/10.1103/PhysRev.54.647[Crossref]
  • [2] S.M. Sze, J. Appl. Phys. 38, 2951 (1967) http://dx.doi.org/10.1063/1.1710030[Crossref]
  • [3] S.M. Sze, Physics of Semiconductors Devices, second edition (John Wiley & Sons, New York, 1981)
  • [4] A. Schenk, Solid State Electron. 35, 1585 (1992) http://dx.doi.org/10.1016/0038-1101(92)90184-E[Crossref]
  • [5] G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, IEEE T. Electron Dev. 39, 331 (1992) http://dx.doi.org/10.1109/16.121690[Crossref]
  • [6] B. Eitan, A. Kolodny, Appl. Phys. Lett. 43, 106 (1983) http://dx.doi.org/10.1063/1.94145[Crossref]
  • [7] D. Ielmini, A.S. Spinelli, A.L. Lacaita, A. Martinelli, G. Ghidini, Solid State Electron. 45, 1361 (2001) http://dx.doi.org/10.1016/S0038-1101(01)00173-3[Crossref]
  • [8] D.M. Sathaiya, S. Karmalkar, IEEE T. Electron Dev. 55, 557 (2008) http://dx.doi.org/10.1109/TED.2007.912993[Crossref]
  • [9] D.M. Sathaiya, S. Karmalkar, J. Appl. Phys. 99, 093701 (2006) http://dx.doi.org/10.1063/1.2191620[Crossref]
  • [10] S. Karmalkar, D.M. Sathaiya, Appl. Phys. Lett. 82, 3976 (2003) http://dx.doi.org/10.1063/1.1579852[Crossref]
  • [11] S. Karmalkar, N. Satyan, D.M. Sathaiya, IEEE Electr. Device L. 27, 87 (2006) http://dx.doi.org/10.1109/LED.2005.862672[Crossref]
  • [12] J. Racko et al., In: J. Präšek, M. Adémek, I. Szendiuch (Eds.), 32nd International Spring Seminar on Electronics Technology, 13–17 May 2009, Brno, Czech Republic (Brno University of Technology, Brno, 2009) 256
  • [13] J. Racko et al., Solid State Electron. 52, 1755 (2008) http://dx.doi.org/10.1016/j.sse.2008.07.009[Crossref]
  • [14] J. Racko et al., J. Electr. Eng. 59, 81 (2008)
  • [15] K. Fröhlich et al., J. Vac. Sci. Technol. B 27, 266 (2009) http://dx.doi.org/10.1116/1.3021030[Crossref]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0027-7
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