Trap-assisted tunnelling current in MIM structures

Juraj Racko; Miroslav Mikolášek; Ralf Granzner; Juraj Breza; Daniel Donoval; Alena Grmanová; Ladislav Harmatha; Frank Schwierz; Karol Fröhlich

doi:10.2478/s11534-010-0027-7

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Link to site

Journal

Open Physics

2011 | 9 | 1 | 230-241

Article title

Trap-assisted tunnelling current in MIM structures

Authors

Juraj Racko , Miroslav Mikolášek , Ralf Granzner , Juraj Breza , Daniel Donoval , Alena Grmanová , Ladislav Harmatha , Frank Schwierz , Karol Fröhlich

Content

http://www.degruyter.com/view/j/phys.2011.9.issue-1/s11534-010-0027-7/s11534-010-0027-7.pdf [remote]

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Languages of publication

Abstracts

A new model is presented of current transport in Metal Insulator Metal (MIM) structures by quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer, tunnelling via defects present in the insulating layer plays an important role. Examples of the influence of the material and thickness of the insulating layer, energy distribution of traps, and metal work functions are also provided.

Keywords

MIM I-V characteristics trap-assisted tunnelling high-permittivity dielectrics

Publisher

De Gruyter Open

Journal

Open Physics

Year

2011

Volume

Issue

Pages

230-241

Physical description

Dates

published

1 - 2 - 2011

online

24 - 9 - 2010

References

[1] J. Frenkel, Phys. Rev. 54, 647 (1938) http://dx.doi.org/10.1103/PhysRev.54.647[Crossref]
[2] S.M. Sze, J. Appl. Phys. 38, 2951 (1967) http://dx.doi.org/10.1063/1.1710030[Crossref]
[3] S.M. Sze, Physics of Semiconductors Devices, second edition (John Wiley & Sons, New York, 1981)
[4] A. Schenk, Solid State Electron. 35, 1585 (1992) http://dx.doi.org/10.1016/0038-1101(92)90184-E[Crossref]
[5] G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, IEEE T. Electron Dev. 39, 331 (1992) http://dx.doi.org/10.1109/16.121690[Crossref]
[6] B. Eitan, A. Kolodny, Appl. Phys. Lett. 43, 106 (1983) http://dx.doi.org/10.1063/1.94145[Crossref]
[7] D. Ielmini, A.S. Spinelli, A.L. Lacaita, A. Martinelli, G. Ghidini, Solid State Electron. 45, 1361 (2001) http://dx.doi.org/10.1016/S0038-1101(01)00173-3[Crossref]
[8] D.M. Sathaiya, S. Karmalkar, IEEE T. Electron Dev. 55, 557 (2008) http://dx.doi.org/10.1109/TED.2007.912993[Crossref]
[9] D.M. Sathaiya, S. Karmalkar, J. Appl. Phys. 99, 093701 (2006) http://dx.doi.org/10.1063/1.2191620[Crossref]
[10] S. Karmalkar, D.M. Sathaiya, Appl. Phys. Lett. 82, 3976 (2003) http://dx.doi.org/10.1063/1.1579852[Crossref]
[11] S. Karmalkar, N. Satyan, D.M. Sathaiya, IEEE Electr. Device L. 27, 87 (2006) http://dx.doi.org/10.1109/LED.2005.862672[Crossref]
[12] J. Racko et al., In: J. Präšek, M. Adémek, I. Szendiuch (Eds.), 32nd International Spring Seminar on Electronics Technology, 13–17 May 2009, Brno, Czech Republic (Brno University of Technology, Brno, 2009) 256
[13] J. Racko et al., Solid State Electron. 52, 1755 (2008) http://dx.doi.org/10.1016/j.sse.2008.07.009[Crossref]
[14] J. Racko et al., J. Electr. Eng. 59, 81 (2008)
[15] K. Fröhlich et al., J. Vac. Sci. Technol. B 27, 266 (2009) http://dx.doi.org/10.1116/1.3021030[Crossref]

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.-psjd-doi-10_2478_s11534-010-0027-7

Identifiers

DOI

10.2478/s11534-010-0027-7